features high surge current capability stud cathode and stud anode version wide current range typical applications semiconductor rohs rohs page1of5 glass passivated standard recovery diodes n high power products ell voltage up to 1600v v rrm rohs compliant 12d(r)series (stud version), 12a do203aa(do4) battery charges converters power supplies machine tool controls product summary i f(av) 12a major ratings and characteristics parameter unit v v rrm i fsm i f(av) i t 2 t j 12 a s 2 aa oc test conditions values i f(rms) t c oc a 140 19 265 280 351 325 200to1600 65to175 50hz 60hz 50hz 60hz range electrical specifications voltage ratings voltage type number code v ,maximum rrm repetitive peak reverse voltage v v ,maximum rsm non-repetitive peak voltage v v ,mimimum r(br) avalanche voltage v (1) v ,maximum rrm at tj=175 c ma 12d(r) 02 04 06 08 10 12 16 200 400 600 800 1000 1200 1600 275 500 725 950 1200 1400 1800 500 750 950 1150 1350 12 (1) avalanche version only available from v 400v to 1600v rrm note 1750 glass passivated chips
semiconductor rohs rohs page2of5 n high power products ell forward conduction parameter symbol unit thermal and mechanical specifcations 12d(r)series test conditions values maximumaverageforwardcurrent atcasetemperature i f(av) 180 conduction,halfsinewave i f(rms) maximumrmsforwardcurrent 12 a 140 oc 19 k/w maximumonrepetitivepeak reversepower 10ssquarepulse,t =t maximum j j maximumpeak,onecycleforward, nonreptitivesurgecurrent i fsm t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 t ms =10 t ms = 8.3 t ms =10 t ms =8.3 novoltage reapplied 100%v rrm reapplied novoltage reapplied 100%v rrm reapplied i t 2 sinusoidalhalfwave, initialt =t maximum j j 7 265 280 225 235 351 325 249 230 a s 2 a a 3511 t=0.1to10ms,novoltagereapplied i t 2 maximuml2tforfusing maximuml2 tforfusing maximumforwardvoltagedrop v fm 1.25 a s 2 v l =38a,t =25?c,t =400srectangularwave pk j p (1) avalanche only for avalanche version, all other paramet ers the same as 12d note parameter symbol units test conditions values maximumjunctionoperating temperaturerange maximumstoragetemperaturerange 65to175 65to200 oc 0.5 k/w maximumthermalresistace, junctiontocase maximumthermalresistance casetoheatsink 2 (13) (10) 6 0.21 (lbfin) nm allowablemountingtorque approximateweight casestyle do203aa(do4) t j t stg r thjc r thcs (lbfin) nm g oz. notlubricatedthreads lubricatedthreads mountingsurface,smooth,flatandgreased dcoperation seedimensionslinkattheendofdatasheet p r (1) 1.5 +0 10% 1.2 +0 10% ! r conduction thjc conduction angel sinusoidal conduction rectangular conduction units test conductions k/w 180? 120? 90 ? 60? 30? 0.33 0.41 0.53 0.78 1.28 0.26 0.44 0.58 0.81 1.29 t =t maximum j j ? the table above shows the increment of thermal resistance r when devices thjc note operate at different conduction angles than dc
semiconductor rohs rohs n high power products ell 12d(r)series maximum allowable case temperature(?c) maximum average forward power loss (w) average forward current (a) average forward current (a) average forward current (a) maximum allowable ambient temperature (c) fig. 3 forward power loss characteristics fig.1 current ratings characteristics fig.2 current ratings characteristics 30 60 90 120 180 dc maximum allowable case temperature(?c) 60 30 90 120 180 dc maximum average forward power loss (w) fig. 4 forward power loss characteristics average forward current (a) maximum allowable ambient temperature (c) 30 60 90 120 180 0 4 8 12 10 14 140 160 150 180 170 conduction period 0 4 8 12 16 20 130 140 160 150 180 170 30 60 90 120 180 rmslimit conductionangle tj c = 175 r = 8k/wdelta r thsa 6k/w 12k/w 10k/w 15k/w 20k/w 30k/w 0 4 8 12 14 25 50 75 100 0 4 8 10 6 12 conduction period tj c = 175 rms limit rthsa = 6k/w-delta r 8k/w 12k/w 10k/w 15k/w 20k/w 30k/w 4 0 25 8 20 16 12 75 50 100 0 4 8 12 20 16 12d(r)series 12d(r)series 12d(r)series page3of5 conductionangle 12d(r)series r (dc)=2.0k/w thjc 2 6 r (dc)=2.0k/w thjc 2 6 10 2 14
semiconductor rohs rohs n high power products ell 12d(r)series steady state value rthjc = 2.0k/w (dc operation) peak half sine wave forward current (a) instantaneous forward current (a) peak half sine wave forward current (a) transient thermal impedance z (k/w) thjc fig. 5 maximum non-repetitive surge current fig. 6 forward voltage drop characterisics fig.7 maximum non-repetitive surge current fig.8 thermal impedan ce z characteristics thjc 1 10 100 1 0 1 0.1 0.01 numberofequalamplitudehalfcyclecurrentpulses(n) instantaneousforwardvoltage(v) pulse train duration (s) square wave pulse duration (s) ordering information table 1 current rating: code = i f(av) 2 d = standard recovery device 3 none = stud normal polarity (cathode to stud) 4 r = stud reverse polarity (anode to stud) device code d m 12 r 12 1 2 3 4 5 5 voltage code 100 = v (see voltage ratings table) rrm none = stud base do-203aa (do-4) #10-32 unf-2a m = stud base do-230aa (do-4) m5 0.8 (not available for avalanche diodes) at any rated load condition and with rated v applied following surge. rrm initial tj = 175c @60 hz 0.0083 s @50 hz 0.0100 s 125 100 150 175 225 200 250 tj = 175c tj = 25c 2 3 4 5 6 10 100 1000 1 125 100 150 175 200 225 250 275 0.001 10 0.1 1 0.01 0.1 1 10 page4of5 12d(r)series 12d(r)series 12d(r)series maximum non repetitive surge current versus pulse train duration initial tj = 175c no voltage reapplied rated v reapplied rrm 12d(r)series
semiconductor rohs rohs n high power products ell 12d(r)series (0.45/0.48) 11.6/12.4 10.6/11.2 (0.41/0.44) (0.02/0.04) 0.5/1.0 ?8.5/?8.9 (?0.33/?0.35) ?1.5/?1.7 ?0.05/?0.06 5.0/5.6 (0.19/0.22) 10/32 unf-2a for metric devices: m5 0.8 10.5/11.5 (0.41/0.45) 20.0/21.0 (0.78/0.82) 9.6/10.1 (0.37/0.39) 3.7/4.3 (0.14/0.16) page5of5
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